{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9716091","patent":{"patent_number":"US-9716091","title":"Fin field effect transistor","assignee":null,"inventors":[],"filing_date":"2016-06-27T00:00:00.000Z","publication_date":"2017-07-25T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A fin field effect transistor (FinFET) including a first insulation region and a second insulation region and fin there between. A gate stack is disposed over a first portion of the fin. A strained source/drain material is disposed over a second portion of the fin. The strained source/drain material has a flat top surface extending over the first and second insulation regions. The first insulation region may include a tapered top surface."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fin field effect transistor","description":"A fin field effect transistor (FinFET) including a first insulation region and a second insulation region and fin there between. A gate stack is disposed over a first portion of the fin. A strained so","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9716091","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9716091","citation_suggestion":"Patentable. \"Fin field effect transistor\" (US-9716091). https://patentable.app/patents/US-9716091","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9716091","json":"https://patentable.app/api/llm-context/US-9716091","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:14:54.004Z"}