{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9716128","patent":{"patent_number":"US-9716128","title":"Methods of manufacturing semiconductor devices","assignee":null,"inventors":[],"filing_date":"2015-03-17T00:00:00.000Z","publication_date":"2017-07-25T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"Active patterns spaced apart from each other by an isolation layer are formed in a substrate. Gate structures extending in the isolation layer through the active patterns are formed. Each active pattern is divided into a central portion and a peripheral portion facing the central portion by the gate structures. A protrusion of at least one of active pattern is formed. The protrusion is exposed from a top surface of the isolation layer, and transformed into silicide such that a first silicide ohmic pad is formed at the central portion of the active pattern and a second silicide ohmic pad is formed at the peripheral portion of the active pattern. A conductive line structure electrically connected to the first silicide ohmic pad is formed. A conductive contact electrically connected to the second silicide ohmic pad is formed. A data storage unit electrically connected to the conductive contact is formed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of manufacturing semiconductor devices","description":"Active patterns spaced apart from each other by an isolation layer are formed in a substrate. Gate structures extending in the isolation layer through the active patterns are formed. Each active patte","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9716128","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9716128","citation_suggestion":"Patentable. \"Methods of manufacturing semiconductor devices\" (US-9716128). https://patentable.app/patents/US-9716128","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9716128","json":"https://patentable.app/api/llm-context/US-9716128","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:45:01.235Z"}