{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9716148","patent":{"patent_number":"US-9716148","title":"Methods of forming semiconductor structures including III-V semiconductor material using substrates comprising molybdenum, and structures formed by such methods","assignee":null,"inventors":[],"filing_date":"2014-12-22T00:00:00.000Z","publication_date":"2017-07-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":19,"abstract":"Methods of fabricating semiconductor structures include the formation of molybdenum nitride at one or more surfaces of a substrate comprising molybdenum, and providing a layer of III-V semiconductor material, such as GaN, over the substrate. Semiconductor structures formed by methods described herein may include a substrate comprising molybdenum, molybdenum nitride at one or more surfaces of the substrate, and a layer of GaN bonded to the molybdenum nitride."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming semiconductor structures including III-V semiconductor material using substrates comprising molybdenum, and structures formed by such methods","description":"Methods of fabricating semiconductor structures include the formation of molybdenum nitride at one or more surfaces of a substrate comprising molybdenum, and providing a layer of III-V semiconductor m","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9716148","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9716148","citation_suggestion":"Patentable. \"Methods of forming semiconductor structures including III-V semiconductor material using substrates comprising molybdenum, and structures formed by such methods\" (US-9716148). https://patentable.app/patents/US-9716148","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9716148","json":"https://patentable.app/api/llm-context/US-9716148","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:37:31.261Z"}