{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9716155","patent":{"patent_number":"US-9716155","title":"Vertical field-effect-transistors having multiple threshold voltages","assignee":null,"inventors":[],"filing_date":"2015-12-09T00:00:00.000Z","publication_date":"2017-07-25T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"Various embodiments disclose a method for fabricating a semiconductor structure including a plurality of vertical transistors each having different threshold voltages. In one embodiment the method includes forming a structure having at least a substrate, a source contact layer on the substrate, a first spacer layer on the source contact layer, a replacement gate on the first spacer layer, a second spacer layer on the replacement gate, and an insulating layer on the second spacer layer. A first trench is formed in a first region of the structure. A first channel layer having a first doping concentration is epitaxially grown in the first trench. A second trench is formed in a second region of the structure. A second channel layer having a second doping concentration is epitaxially grown in the second trench. The second doping concentration is different from the first doping concentration."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical field-effect-transistors having multiple threshold voltages","description":"Various embodiments disclose a method for fabricating a semiconductor structure including a plurality of vertical transistors each having different threshold voltages. In one embodiment the method inc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9716155","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9716155","citation_suggestion":"Patentable. \"Vertical field-effect-transistors having multiple threshold voltages\" (US-9716155). https://patentable.app/patents/US-9716155","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9716155","json":"https://patentable.app/api/llm-context/US-9716155","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:00:19.747Z"}