{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9716157","patent":{"patent_number":"US-9716157","title":"Silicon carbide semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-08-04T00:00:00.000Z","publication_date":"2017-07-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":2,"abstract":"A silicon carbide substrate includes a first impurity region, a well region in contact with the first impurity region, and a second impurity region separated from the first impurity region by the well region. A first main surface includes a first region in contact with a channel region, and a second region different from the first region. A silicon-containing material is formed on the second region. A first silicon dioxide region is formed on the first region. A second silicon dioxide region is formed by oxidizing the silicon-containing material. A gate runner is electrically connected to a gate electrode and formed in a position facing the second silicon dioxide region. Consequently, a silicon carbide semiconductor device capable of achieving improved insulation performance between the gate runner and the substrate while the surface roughness of the substrate is suppressed, and a method of manufacturing the same can be provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device","description":"A silicon carbide substrate includes a first impurity region, a well region in contact with the first impurity region, and a second impurity region separated from the first impurity region by the well","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9716157","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9716157","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device\" (US-9716157). https://patentable.app/patents/US-9716157","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9716157","json":"https://patentable.app/api/llm-context/US-9716157","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:03:50.742Z"}