{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9716159","patent":{"patent_number":"US-9716159","title":"Method of manufacturing silicon carbide semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-12-09T00:00:00.000Z","publication_date":"2017-07-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":5,"abstract":"After a trench is formed, a deposition film is formed on the front surface of a base material and an inner wall of the trench such that a thickness of a portion of the deposition film covering the front surface of the base material is greater than a thickness of a portion of the deposition film covering the inner wall of the trench. The total thickness of the deposition film is then reduced until the inner wall of the trench is exposed, leaving only the portion of the deposition film covering the front surface of the base material. By performing sacrificial oxidation in this state, the thermal oxide film caused by thermal oxidation barely grows at the interface of the front surface of the base material and the deposition film, and thus the thickness of an n+ source region is mostly maintained."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing silicon carbide semiconductor device","description":"After a trench is formed, a deposition film is formed on the front surface of a base material and an inner wall of the trench such that a thickness of a portion of the deposition film covering the fro","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9716159","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9716159","citation_suggestion":"Patentable. \"Method of manufacturing silicon carbide semiconductor device\" (US-9716159). https://patentable.app/patents/US-9716159","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9716159","json":"https://patentable.app/api/llm-context/US-9716159","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:36:08.009Z"}