{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9716160","patent":{"patent_number":"US-9716160","title":"Extended contact area using undercut silicide extensions","assignee":null,"inventors":[],"filing_date":"2014-08-01T00:00:00.000Z","publication_date":"2017-07-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"The present invention relates generally to semiconductor devices and more particularly, to a structure and method of forming a contact silicide on a source-drain (S-D) region of a field effect transistor (FET) having extensions by using an undercut etch and a salicide process. A method of forming a contact silicide extension is disclosed. The method may include: forming an undercut region below a dielectric layer and above a source-drain region, the undercut region located directly below a bottom of a contact trench and extending below the dielectric layer to a gate spacer formed on a sidewall of a gate stack; and forming a contact silicide in the undercut region, the contact silicide in direct contact with the source-drain region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Extended contact area using undercut silicide extensions","description":"The present invention relates generally to semiconductor devices and more particularly, to a structure and method of forming a contact silicide on a source-drain (S-D) region of a field effect transis","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9716160","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9716160","citation_suggestion":"Patentable. \"Extended contact area using undercut silicide extensions\" (US-9716160). https://patentable.app/patents/US-9716160","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9716160","json":"https://patentable.app/api/llm-context/US-9716160","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:21:07.361Z"}