{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9716164","patent":{"patent_number":"US-9716164","title":"Methods of forming III-V semiconductor structures using multiple substrates, and semiconductor devices fabricated using such methods","assignee":null,"inventors":[],"filing_date":"2013-09-03T00:00:00.000Z","publication_date":"2017-07-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":7,"abstract":"Methods of forming semiconductor devices include epitaxially growing a III-V base layer over a first substrate in a first deposition chamber. The III-V base layer is transferred from the first substrate to a second substrate, and at least one III-V device layer is epitaxially grown on the III-V base layer in a second deposition chamber separate from the first deposition chamber while the III-V base layer is disposed on the second substrate. The first substrate exhibits an average coefficient of thermal expansion (CTE) closer to an average CTE exhibited by the III-V base layer than an average CTE exhibited by the second substrate. Semiconductor devices may be fabricated using such methods."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming III-V semiconductor structures using multiple substrates, and semiconductor devices fabricated using such methods","description":"Methods of forming semiconductor devices include epitaxially growing a III-V base layer over a first substrate in a first deposition chamber. The III-V base layer is transferred from the first substra","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9716164","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9716164","citation_suggestion":"Patentable. \"Methods of forming III-V semiconductor structures using multiple substrates, and semiconductor devices fabricated using such methods\" (US-9716164). https://patentable.app/patents/US-9716164","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9716164","json":"https://patentable.app/api/llm-context/US-9716164","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:33:57.946Z"}