{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9719186","patent":{"patent_number":"US-9719186","title":"Two-dimensional large-area growth method for chalcogen compound, method for manufacturing CMOS-type structure, film of chalcogen compound, electronic device comprising film of chalcogen compound, and CMOS-type structure","assignee":null,"inventors":[],"filing_date":"2016-12-02T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"Provided is a two-dimensional large-area growth method for a chalcogen compound, the method including: depositing a film of a transition metal element or a Group V element on a substrate; thereafter, uniformly diffusing a vaporized chalcogen element, a vaporized chalcogen precursor compound or a chalcogen compound represented by M′X′2+δ within the film; and, thereafter, forming a film of a chalcogen compound represented by MX2 by forming the chalcogen compound represented by MX2 through post-heating."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Two-dimensional large-area growth method for chalcogen compound, method for manufacturing CMOS-type structure, film of chalcogen compound, electronic device comprising film of chalcogen compound, and CMOS-type structure","description":"Provided is a two-dimensional large-area growth method for a chalcogen compound, the method including: depositing a film of a transition metal element or a Group V element on a substrate; thereafter, ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9719186","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9719186","citation_suggestion":"Patentable. \"Two-dimensional large-area growth method for chalcogen compound, method for manufacturing CMOS-type structure, film of chalcogen compound, electronic device comprising film of chalcogen compound, and CMOS-type structure\" (US-9719186). https://patentable.app/patents/US-9719186","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9719186","json":"https://patentable.app/api/llm-context/US-9719186","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:35:23.631Z"}