{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9721792","patent":{"patent_number":"US-9721792","title":"Method of forming strain-relaxed buffer layers","assignee":null,"inventors":[],"filing_date":"2014-08-21T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"Implementations described herein generally relate to methods for relaxing strain in thin semiconductor films grown on another semiconductor substrate that has a different lattice constant. Strain relaxation typically involves forming a strain relaxed buffer layer on the semiconductor substrate for further growth of another semiconductor material on top. Whereas conventionally formed buffer layers are often thick, rough and/or defective, the strain relaxed buffer layers formed using the implementations described herein demonstrate improved surface morphology with minimal defects."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming strain-relaxed buffer layers","description":"Implementations described herein generally relate to methods for relaxing strain in thin semiconductor films grown on another semiconductor substrate that has a different lattice constant. Strain rela","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9721792","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9721792","citation_suggestion":"Patentable. \"Method of forming strain-relaxed buffer layers\" (US-9721792). https://patentable.app/patents/US-9721792","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9721792","json":"https://patentable.app/api/llm-context/US-9721792","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:42:28.078Z"}