{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9721803","patent":{"patent_number":"US-9721803","title":"Etching method for substrate to be processed and plasma-etching device","assignee":null,"inventors":[],"filing_date":"2013-04-10T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":7,"abstract":"In one embodiment of the present invention, an etching method for a substrate to be processed comprises: (a1) a step in which etchant gas is supplied into a processing container than accommodates a substrate to be processed; (b1) a step in which the inside of the processing container is evacuated; (c1) a step in which a noble gas is supplied into the processing container; and (d1) a step in which microwaves are supplied into the processing container so as to excite the plasma of the noble gas inside the processing container. The sequential process including the step of supplying the etchant of supplying the etchant gas, the evacuating step, the step of supplying the noble gas, and the step of exciting the plasma of the noble gas may be repeated."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Etching method for substrate to be processed and plasma-etching device","description":"In one embodiment of the present invention, an etching method for a substrate to be processed comprises: (a1) a step in which etchant gas is supplied into a processing container than accommodates a su","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9721803","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9721803","citation_suggestion":"Patentable. \"Etching method for substrate to be processed and plasma-etching device\" (US-9721803). https://patentable.app/patents/US-9721803","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9721803","json":"https://patentable.app/api/llm-context/US-9721803","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:22:41.556Z"}