{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9721806","patent":{"patent_number":"US-9721806","title":"LDMOS device and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2016-02-25T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":17,"abstract":"The disclosed subject matter provides an LDMOS device and fabrication method thereof. In an LDMOS device, a drift region and a body region are formed in a substrate. A first trench is formed in the drift region and in the substrate between the drift region and the body region. The first trench is separated from the drift region by a first shallow trench isolation structure. A gate dielectric layer is formed on a side surface and a bottom surface of the first trench. A gate electrode filling up the first trench is formed on the gate dielectric layer with a top surface above a top surface of the semiconductor substrate. A source region is formed in the body region on one side of the gate electrode and a drain region is formed in the drift region on another side of the gate electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"LDMOS device and fabrication method thereof","description":"The disclosed subject matter provides an LDMOS device and fabrication method thereof. In an LDMOS device, a drift region and a body region are formed in a substrate. A first trench is formed in the dr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9721806","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9721806","citation_suggestion":"Patentable. \"LDMOS device and fabrication method thereof\" (US-9721806). https://patentable.app/patents/US-9721806","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9721806","json":"https://patentable.app/api/llm-context/US-9721806","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:42:25.304Z"}