{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9721833","patent":{"patent_number":"US-9721833","title":"Semiconductor device with voids within silicon-on-insulator (SOI) structure and method of forming the semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-05-13T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A semiconductor device with voids within a silicon-on-insulator (SOI) structure and a method of forming the semiconductor device are provided. Voids are formed within a Buried Oxide layer (BOX layer) of the silicon-on-insulator (SOI) semiconductor to enhance a performance index of an RF-SOI switch. The semiconductor device with voids within a silicon-on-insulator (SOI) structure includes a semiconductor substrate; an insulating layer disposed on the substrate; a silicon-on-insulator (SOI) layer disposed on the insulating layer; a device isolation layer and an active area disposed within the SOI layer; one or more voids disposed within the insulating layer; and a sealing insulating sealing an opening of the void."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with voids within silicon-on-insulator (SOI) structure and method of forming the semiconductor device","description":"A semiconductor device with voids within a silicon-on-insulator (SOI) structure and a method of forming the semiconductor device are provided. Voids are formed within a Buried Oxide layer (BOX layer) ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9721833","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9721833","citation_suggestion":"Patentable. \"Semiconductor device with voids within silicon-on-insulator (SOI) structure and method of forming the semiconductor device\" (US-9721833). https://patentable.app/patents/US-9721833","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9721833","json":"https://patentable.app/api/llm-context/US-9721833","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T17:28:07.332Z"}