{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9721845","patent":{"patent_number":"US-9721845","title":"Vertical field effect transistors with bottom contact metal directly beneath fins","assignee":null,"inventors":[],"filing_date":"2016-04-26T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"Various embodiments disclose a method for fabricating one or more vertical fin field-effect-transistors. In one embodiment, a structure is formed. The structure comprises a substrate, a source/drain layer, and a plurality of fins formed on the first source/drain layer. The source/drain layer comprises a first semiconductor layer, a sacrificial layer, and a second semiconductor layer. A bottom spacer layer is formed in contact with the second semiconductor layer and the plurality of fins. A gate structure is then formed. A dielectric layer is deposited in contact with at least the gate structure, the bottom spacer layer, and the second semiconductor layer. At least a portion of the dielectric layer and a portion of the second semiconductor are removed. This removal forms a trench exposing a portion of the sacrificial layer. The sacrificial layer is then removed forming a cavity. A contact material is deposited within the trench and the cavity."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical field effect transistors with bottom contact metal directly beneath fins","description":"Various embodiments disclose a method for fabricating one or more vertical fin field-effect-transistors. In one embodiment, a structure is formed. The structure comprises a substrate, a source/drain l","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9721845","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9721845","citation_suggestion":"Patentable. \"Vertical field effect transistors with bottom contact metal directly beneath fins\" (US-9721845). https://patentable.app/patents/US-9721845","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9721845","json":"https://patentable.app/api/llm-context/US-9721845","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:38:25.149Z"}