{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9721851","patent":{"patent_number":"US-9721851","title":"Silicon-germanium fin formation","assignee":null,"inventors":[],"filing_date":"2016-08-11T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":7,"abstract":"Forming a set of semiconductor fins is disclosed. Forming the set of semiconductor fins can include forming a base structure including a silicon substrate, an insulator layer stacked on the silicon substrate, and a plurality of silicon semiconductor fins each stacked directly on the insulator layer. Forming the set of semiconductor fins can include depositing a first atomic layer of germanium atoms on a first set of semiconductor fins in the plurality of semiconductor fins and annealing the first atomic layer and the first set of semiconductor fins. Forming the set of semiconductor fins can include forming, from the annealing, a first set of silicon-germanium semiconductor fins."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon-germanium fin formation","description":"Forming a set of semiconductor fins is disclosed. Forming the set of semiconductor fins can include forming a base structure including a silicon substrate, an insulator layer stacked on the silicon su","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9721851","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9721851","citation_suggestion":"Patentable. \"Silicon-germanium fin formation\" (US-9721851). https://patentable.app/patents/US-9721851","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9721851","json":"https://patentable.app/api/llm-context/US-9721851","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:04:16.813Z"}