{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9721892","patent":{"patent_number":"US-9721892","title":"Method for improving adhesion between porous low k dielectric and barrier layer","assignee":null,"inventors":[],"filing_date":"2015-07-31T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"A semiconductor device and method for manufacturing the same are provided. The method includes providing a semiconductor substrate, forming a porous low-k dielectric layer on the semiconductor substrate, forming a through-hole and a trench of a copper interconnect structure, performing a helium plasma treatment on an exposed surface of the porous low-k dielectric layer, performing a nitrogen plasma treatment on the exposed surface of the porous low-k dielectric layer to form a silicon nitride layer, performing an argon plasma treatment on the silicon nitride layer, and forming a diffusion barrier layer on bottoms and sidewalls of the through-hole and the trench of the copper interconnect structure. Through the successive helium, nitrogen and argon plasma treatments, the low-k dielectric layer has a smooth and dense surface that increases the adhesion strength between the low-k dielectric layer and the diffusion barrier layer to improve reliability and yield of the semiconductor device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for improving adhesion between porous low k dielectric and barrier layer","description":"A semiconductor device and method for manufacturing the same are provided. The method includes providing a semiconductor substrate, forming a porous low-k dielectric layer on the semiconductor substra","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9721892","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9721892","citation_suggestion":"Patentable. \"Method for improving adhesion between porous low k dielectric and barrier layer\" (US-9721892). https://patentable.app/patents/US-9721892","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9721892","json":"https://patentable.app/api/llm-context/US-9721892","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:20:56.942Z"}