{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9721897","patent":{"patent_number":"US-9721897","title":"Transistor with air spacer and self-aligned contact","assignee":null,"inventors":[],"filing_date":"2016-09-27T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A method of fabricating a semiconductor transistor and the semiconductor transistor include a source region and a drain region within a substrate. The method includes forming a gate above the substrate, forming a source contact above the source region and a drain contact above the drain region, and forming air spacers within a dielectric between the gate and each of the source contact and the drain contact. Metal caps are formed on the source contact and the drain contact, and a gate cap is formed between the dielectric and at least a portion of a bottom surface of higher-level contacts, which are contacts formed above the source contact and the drain contact."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Transistor with air spacer and self-aligned contact","description":"A method of fabricating a semiconductor transistor and the semiconductor transistor include a source region and a drain region within a substrate. The method includes forming a gate above the substrat","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9721897","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9721897","citation_suggestion":"Patentable. \"Transistor with air spacer and self-aligned contact\" (US-9721897). https://patentable.app/patents/US-9721897","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9721897","json":"https://patentable.app/api/llm-context/US-9721897","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:17:55.479Z"}