{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9721909","patent":{"patent_number":"US-9721909","title":"Hybrid microwave integrated circuit","assignee":null,"inventors":[],"filing_date":"2016-02-01T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A radio frequency (RF) integrated circuit includes a first layer of semiconductor material in which a high electron mobility transfer (HEMT) device is formed. A semiconductor heat spreader substrate supports the first layer of semiconductor material. A pair of matching circuits are electrically connected to the HEMT device, wherein the pair of matching circuits are supported on a semiconductor substrate of a semiconductor material different than the semiconductor material of the first semiconductor heat spreader substrate. The first layer of semiconductor material and the first semiconductor heat spreader substrate have a thickness that is less than a second thickness of the semiconductor substrate supporting the pair of matching circuits."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Hybrid microwave integrated circuit","description":"A radio frequency (RF) integrated circuit includes a first layer of semiconductor material in which a high electron mobility transfer (HEMT) device is formed. A semiconductor heat spreader substrate s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9721909","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9721909","citation_suggestion":"Patentable. \"Hybrid microwave integrated circuit\" (US-9721909). https://patentable.app/patents/US-9721909","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9721909","json":"https://patentable.app/api/llm-context/US-9721909","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:21:35.928Z"}