{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9721935","patent":{"patent_number":"US-9721935","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2014-09-02T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":44,"abstract":"A semiconductor device includes a first chip, a second chip stacked on the first chip, and a third chip stacked on the second chip. The second chip includes a second semiconductor layer having a second circuit surface facing the first wiring layer and a second rear surface opposite to the second circuit surface, a second wiring layer provided on the second circuit surface and connected to a first wiring layer of the first chip, and a second electrode extending through the second semiconductor layer and connected to the second wiring layer. The third chip includes a third semiconductor layer having a third circuit surface and a third rear surface facing the second chip, a third wiring layer provided on the third circuit surface, and a third electrode extending through the third semiconductor layer, connected to the third wiring layer and connected to the second electrode through bumps."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"A semiconductor device includes a first chip, a second chip stacked on the first chip, and a third chip stacked on the second chip. The second chip includes a second semiconductor layer having a secon","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9721935","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9721935","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-9721935). https://patentable.app/patents/US-9721935","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9721935","json":"https://patentable.app/api/llm-context/US-9721935","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:41:33.997Z"}