{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9721949","patent":{"patent_number":"US-9721949","title":"Method of forming super steep retrograde wells on FinFET","assignee":null,"inventors":[],"filing_date":"2016-01-29T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":13,"abstract":"A method of making a semiconductor structure is provided including providing a plurality of fins on a semiconductor substrate; depositing a layer containing silicon dioxide on the plurality of fins and on a surface of the semiconductor substrate; depositing a photoresist layer on one or more but less than all of the plurality of fins; etching the layer of silicon dioxide off of one or more of the plurality of fins on which the photoresist layer had not been deposited; stripping the photoresist layer; depositing a layer of pure boron on one or more of the plurality of fins on which a photoresist had not been deposited; and depositing a silicon nitride liner step on the plurality of fins. A partial semiconductor device fabricated by said method is also provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming super steep retrograde wells on FinFET","description":"A method of making a semiconductor structure is provided including providing a plurality of fins on a semiconductor substrate; depositing a layer containing silicon dioxide on the plurality of fins an","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9721949","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9721949","citation_suggestion":"Patentable. \"Method of forming super steep retrograde wells on FinFET\" (US-9721949). https://patentable.app/patents/US-9721949","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9721949","json":"https://patentable.app/api/llm-context/US-9721949","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:41:44.461Z"}