{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9721955","patent":{"patent_number":"US-9721955","title":"Structure and method for SRAM FinFET device having an oxide feature","assignee":null,"inventors":[],"filing_date":"2014-04-25T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":21,"abstract":"The present disclosure provides an embodiment of a fin-like field-effect transistor (FinFET) device. The device includes a substrate having an n-type FinFET (NFET) region and a p-type FinFET (PFET) region. The device also includes a first and a second fin structures over the substrate in the NFET region and a third fin structure over the substrate in the PFET region. The device also includes a first high-k (HK)/metal gate (MG) stack in the NFET region, including wrapping over a portion of the first fin structure, a first subset of the first source/drain (S/D) features, adjacent to the first HK/MG stack, over the recessed first fin structure and a second subset of the first S/D features partially over the recessed second fin structure and partially over the recessed first fin structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Structure and method for SRAM FinFET device having an oxide feature","description":"The present disclosure provides an embodiment of a fin-like field-effect transistor (FinFET) device. The device includes a substrate having an n-type FinFET (NFET) region and a p-type FinFET (PFET) re","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9721955","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9721955","citation_suggestion":"Patentable. \"Structure and method for SRAM FinFET device having an oxide feature\" (US-9721955). https://patentable.app/patents/US-9721955","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9721955","json":"https://patentable.app/api/llm-context/US-9721955","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:39:50.883Z"}