{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9721963","patent":{"patent_number":"US-9721963","title":"Three-dimensional memory device having a transition metal dichalcogenide channel","assignee":null,"inventors":[],"filing_date":"2016-04-08T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":31,"abstract":"A monolithic three-dimensional memory device contains a high mobility metal dichalcogenide channel. A stack of alternating layers comprising first material layers and second material layers is formed over a substrate. A memory opening is formed through the stack of alternating layers. A memory film is formed in the memory opening. A metal dichalcogenide channel is formed on an inner sidewall of the memory film. A dielectric core is formed within the metal dichalcogenide channel. A stack of titanium and gold may be employed to form a drain region to enhance contact. A hafnium oxide, aluminum oxide or hafnium aluminum oxide hafnium aluminum oxide layer may be employed on either side, or on both sides, of the metal dichalcogenide channel to enhance the mobility of electrons in the metal dichalcogenide channel."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional memory device having a transition metal dichalcogenide channel","description":"A monolithic three-dimensional memory device contains a high mobility metal dichalcogenide channel. A stack of alternating layers comprising first material layers and second material layers is formed ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9721963","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9721963","citation_suggestion":"Patentable. \"Three-dimensional memory device having a transition metal dichalcogenide channel\" (US-9721963). https://patentable.app/patents/US-9721963","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9721963","json":"https://patentable.app/api/llm-context/US-9721963","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:50:01.385Z"}