{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9721970","patent":{"patent_number":"US-9721970","title":"Gate all-around FinFET device and a method of manufacturing same","assignee":null,"inventors":[],"filing_date":"2016-04-22T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A method for manufacturing a fin field-effect transistor (FinFET) device, comprises patterning a first layer on a substrate to form at least one fin, patterning a second layer under the first layer to remove a portion of the second layer on sides of the at least one fin, forming a sacrificial gate electrode on the at least one fin, and a spacer on the sacrificial gate electrode, selectively removing the sacrificial gate electrode, depositing an oxide layer on top and side portions of the at least one fin corresponding to a channel region of the at least one fin, performing thermal oxidation to condense the at least one fin in the channel region until a bottom portion of the at least one fin is undercut, and stripping a resultant oxide layer from the thermal oxidation, leaving a gap in the channel region between a bottom portion of the at least one fin and the second layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Gate all-around FinFET device and a method of manufacturing same","description":"A method for manufacturing a fin field-effect transistor (FinFET) device, comprises patterning a first layer on a substrate to form at least one fin, patterning a second layer under the first layer to","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9721970","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9721970","citation_suggestion":"Patentable. \"Gate all-around FinFET device and a method of manufacturing same\" (US-9721970). https://patentable.app/patents/US-9721970","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9721970","json":"https://patentable.app/api/llm-context/US-9721970","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:02:53.801Z"}