{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9722015","patent":{"patent_number":"US-9722015","title":"Capacitor structure and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-10-03T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"The present disclosure provides a capacitor structure, including a substrate having a conductive region; a trench in the conductive region and having a bottom portion and an inner sidewall portion; a spacer over the inner sidewall portion of the trench; a first conductive layer over the bottom portion and the spacer in the trench; a first dielectric layer over the first conductive layer and in the trench; a second conductive layer over the first dielectric layer and in the trench; and a second dielectric layer over the second conductive layer and in the trench, wherein the spacer comprises an angle in a range of from about 85 to about 89 degrees with respect to the bottom portion of the trench and comprises a flared opening opposite to the bottom portion of the trench. The present disclosure also provides a method for manufacturing the capacitor structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Capacitor structure and method for manufacturing the same","description":"The present disclosure provides a capacitor structure, including a substrate having a conductive region; a trench in the conductive region and having a bottom portion and an inner sidewall portion; a ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9722015","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9722015","citation_suggestion":"Patentable. \"Capacitor structure and method for manufacturing the same\" (US-9722015). https://patentable.app/patents/US-9722015","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9722015","json":"https://patentable.app/api/llm-context/US-9722015","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:12:11.314Z"}