{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9722019","patent":{"patent_number":"US-9722019","title":"High voltage integrated circuit device","assignee":null,"inventors":[],"filing_date":"2015-02-13T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":10,"abstract":"A high voltage integrated circuit device suppresses the quantity of holes that are implanted due to a negative voltage surge, thus preventing malfunction and destruction of a high side circuit. A p−-type aperture portion has a gap portion in an n-type well region that is a voltage resistant region, penetrating the n-type well region to reach a p-type substrate, so as to enclose an n-type well region that is a high potential region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High voltage integrated circuit device","description":"A high voltage integrated circuit device suppresses the quantity of holes that are implanted due to a negative voltage surge, thus preventing malfunction and destruction of a high side circuit. A p−-t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9722019","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9722019","citation_suggestion":"Patentable. \"High voltage integrated circuit device\" (US-9722019). https://patentable.app/patents/US-9722019","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9722019","json":"https://patentable.app/api/llm-context/US-9722019","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:57:24.513Z"}