{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9722020","patent":{"patent_number":"US-9722020","title":"Super junction semiconductor device having columnar super junction regions extending into a drift layer","assignee":null,"inventors":[],"filing_date":"2016-05-20T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":13,"abstract":"A super junction semiconductor device includes a semiconductor portion with first and second surfaces parallel to one another and including a doped layer of a first conductivity type formed at least in a cell area. Columnar first super junction regions of a second conductivity type extend in a direction perpendicular to the first surface and are separated by columnar second super junction regions of the first conductivity type. The first and second super junction regions form a super junction structure between the first surface and the doped layer. A first electrode structure directly adjoins the first surface and a second electrode structure directly adjoins the second surface. The first electrode structure has a first thickness and the second electrode structure has a second thickness. A sum of the first and second thicknesses is at least 20% of the thickness of the semiconductor portion between the first and second surfaces."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Super junction semiconductor device having columnar super junction regions extending into a drift layer","description":"A super junction semiconductor device includes a semiconductor portion with first and second surfaces parallel to one another and including a doped layer of a first conductivity type formed at least i","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9722020","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9722020","citation_suggestion":"Patentable. \"Super junction semiconductor device having columnar super junction regions extending into a drift layer\" (US-9722020). https://patentable.app/patents/US-9722020","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9722020","json":"https://patentable.app/api/llm-context/US-9722020","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:00:48.800Z"}