{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9722026","patent":{"patent_number":"US-9722026","title":"Semiconductor structure in which film including germanium oxide is provided on germanium layer, and method for manufacturing semiconductor structure","assignee":null,"inventors":[],"filing_date":"2014-06-06T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"A semiconductor structure includes: a germanium layer; and a first insulating film that is formed on an upper surface of the germanium layer, primarily contains germanium oxide and a substance having an oxygen potential lower than an oxygen potential of germanium oxide, and has a physical film thickness of 3 nm or less; wherein a half width of frequency to height in a 1 μm square area of the upper surface of the germanium layer is 0.7 nm or less."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure in which film including germanium oxide is provided on germanium layer, and method for manufacturing semiconductor structure","description":"A semiconductor structure includes: a germanium layer; and a first insulating film that is formed on an upper surface of the germanium layer, primarily contains germanium oxide and a substance having ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9722026","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9722026","citation_suggestion":"Patentable. \"Semiconductor structure in which film including germanium oxide is provided on germanium layer, and method for manufacturing semiconductor structure\" (US-9722026). https://patentable.app/patents/US-9722026","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9722026","json":"https://patentable.app/api/llm-context/US-9722026","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:39:52.361Z"}