{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9722027","patent":{"patent_number":"US-9722027","title":"Silicon carbide semiconductor device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2014-06-25T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":17,"abstract":"A silicon carbide semiconductor device includes a silicon carbide substrate and a gate electrode. The silicon carbide substrate includes a first source region and a second source region, a first body region, a second body region, a first drift region, a second drift region, a third drift region, and a first connection region. The first connection region is provided to include a first intersection and a second intersection, the first intersection being an intersection of a straight line along a first straight-line portion and a straight line along a second straight-line portion, the second intersection being an intersection of a straight line along a third straight-line portion and a straight line along a fourth straight-line portion, and the first connection region has a second conductivity type."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device and method for manufacturing the same","description":"A silicon carbide semiconductor device includes a silicon carbide substrate and a gate electrode. The silicon carbide substrate includes a first source region and a second source region, a first body ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9722027","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9722027","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device and method for manufacturing the same\" (US-9722027). https://patentable.app/patents/US-9722027","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9722027","json":"https://patentable.app/api/llm-context/US-9722027","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:22:23.955Z"}