{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9722028","patent":{"patent_number":"US-9722028","title":"Silicon carbide substrate, semiconductor device, and methods for manufacturing them","assignee":null,"inventors":[],"filing_date":"2016-08-05T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A silicon carbide substrate has a first main surface, and a second main surface opposite to the first main surface. A region including at least one main surface of the first and second main surfaces is made of single-crystal silicon carbide. In the one main surface, sulfur atoms are present at not less than 60×1010 atoms/cm2 and not more than 2000×1010 atoms/cm2, and carbon atoms as an impurity are present at not less than 3 at % and not more than 25 at %. Thereby, a silicon carbide substrate having a stable surface, a semiconductor device using the substrate, and methods for manufacturing them can be provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide substrate, semiconductor device, and methods for manufacturing them","description":"A silicon carbide substrate has a first main surface, and a second main surface opposite to the first main surface. A region including at least one main surface of the first and second main surfaces i","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9722028","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9722028","citation_suggestion":"Patentable. \"Silicon carbide substrate, semiconductor device, and methods for manufacturing them\" (US-9722028). https://patentable.app/patents/US-9722028","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9722028","json":"https://patentable.app/api/llm-context/US-9722028","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:22:41.267Z"}