{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9722039","patent":{"patent_number":"US-9722039","title":"Fabricating high-power devices","assignee":null,"inventors":[],"filing_date":"2015-12-31T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":18,"abstract":"According to an embodiment of the present invention, a method for fabricating a semiconductor device comprises depositing a transition layer on a substrate, depositing GaN material on the transition layer, forming a contact on the GaN material, depositing a stressor layer on the GaN material, separating the transition layer and the substrate from the GaN material, patterning and removing portions of the GaN material to expose portions of the stressor layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fabricating high-power devices","description":"According to an embodiment of the present invention, a method for fabricating a semiconductor device comprises depositing a transition layer on a substrate, depositing GaN material on the transition l","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9722039","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9722039","citation_suggestion":"Patentable. \"Fabricating high-power devices\" (US-9722039). https://patentable.app/patents/US-9722039","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9722039","json":"https://patentable.app/api/llm-context/US-9722039","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:40:14.099Z"}