{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9722047","patent":{"patent_number":"US-9722047","title":"Method of producing a high-voltage transistor","assignee":null,"inventors":[],"filing_date":"2016-05-05T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":8,"abstract":"The high-voltage transistor device comprises a semiconductor substrate (1) with a source region (2) of a first type of electrical conductivity, a body region (3) including a channel region (4) of a second type of electrical conductivity opposite to the first type of conductivity, a drift region (5) of the first type of conductivity, and a drain region (6) of the first type of conductivity extending longitudinally in striplike fashion from the channel region (4) to the drain region (6) and laterally confined by isolation regions (9). The drift region (5) comprises a doping of the first type of conductivity and includes an additional region (8) with a net doping of the second type of conductivity to adjust the electrical properties of the drift region (5). The drift region depth and the additional region depth do not exceed the maximal depth (17) of the isolation regions (9)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of producing a high-voltage transistor","description":"The high-voltage transistor device comprises a semiconductor substrate (1) with a source region (2) of a first type of electrical conductivity, a body region (3) including a channel region (4) of a se","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9722047","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9722047","citation_suggestion":"Patentable. \"Method of producing a high-voltage transistor\" (US-9722047). https://patentable.app/patents/US-9722047","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9722047","json":"https://patentable.app/api/llm-context/US-9722047","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:23:27.463Z"}