{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9722048","patent":{"patent_number":"US-9722048","title":"Vertical transistors with reduced bottom electrode series resistance","assignee":null,"inventors":[],"filing_date":"2016-03-28T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":14,"abstract":"A semiconductor device includes a source including a first doped semiconductor layer arranged on a substrate, a layer of metal arranged on the first doped semiconductor layer, and a second doped semiconductor layer arranged on the layer of metal; a channel extending from the second doped semiconductor layer to a drain including an epitaxial growth; a gate disposed on sidewalls of the channel between the second doped semiconductor layer and the drain; an interlayer dielectric (ILD) disposed on the second doped semiconductor layer and the gate; and a source contact extending from a surface of the ILD to abut the layer of metal of the source."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical transistors with reduced bottom electrode series resistance","description":"A semiconductor device includes a source including a first doped semiconductor layer arranged on a substrate, a layer of metal arranged on the first doped semiconductor layer, and a second doped semic","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9722048","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9722048","citation_suggestion":"Patentable. \"Vertical transistors with reduced bottom electrode series resistance\" (US-9722048). https://patentable.app/patents/US-9722048","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9722048","json":"https://patentable.app/api/llm-context/US-9722048","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:40:43.696Z"}