{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9722055","patent":{"patent_number":"US-9722055","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2016-08-10T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":8,"abstract":"A semiconductor device with a structure in which an increase in the number of oxygen vacancies in an oxide semiconductor layer can be suppressed and a method for manufacturing the semiconductor device are provided. The semiconductor device includes an oxide insulating layer; intermediate layers apart from each other over the oxide insulating layer; a source electrode layer and a drain electrode layer over the intermediate layers; an oxide semiconductor layer that is electrically connected to the source electrode layer and the drain electrode layer and is in contact with the oxide insulating layer; a gate insulating film over the source electrode layer, the drain electrode layer, and the oxide semiconductor layer; and a gate electrode layer that is over the gate insulating film and overlaps with the source electrode layer, the drain electrode layer, and the oxide semiconductor layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"A semiconductor device with a structure in which an increase in the number of oxygen vacancies in an oxide semiconductor layer can be suppressed and a method for manufacturing the semiconductor device","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9722055","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9722055","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-9722055). https://patentable.app/patents/US-9722055","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9722055","json":"https://patentable.app/api/llm-context/US-9722055","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:27:14.553Z"}