{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9722063","patent":{"patent_number":"US-9722063","title":"Protective insulator for HFET devices","assignee":null,"inventors":[],"filing_date":"2016-04-11T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":27,"abstract":"A high-voltage field effect transistor (HFET) includes a first semiconductor material, a second semiconductor material, and a heterojunction. The heterojunction is disposed between the first semiconductor material and the second semiconductor material. The HFET also includes a plurality of composite passivation layers, where a first composite passivation layer includes a first insulation layer and a first passivation layer, and a second composite passivation layer includes a second insulation layer and a second passivation layer. A gate dielectric is disposed between the first passivation layer and the second semiconductor material. A gate electrode is disposed between the gate dielectric and the first passivation layer. A first gate field plate is disposed between the first passivation layer and the second passivation layer. A source electrode and a drain electrode are coupled to the second semiconductor material, and a source field plate is coupled to the source electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Protective insulator for HFET devices","description":"A high-voltage field effect transistor (HFET) includes a first semiconductor material, a second semiconductor material, and a heterojunction. The heterojunction is disposed between the first semicondu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9722063","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9722063","citation_suggestion":"Patentable. \"Protective insulator for HFET devices\" (US-9722063). https://patentable.app/patents/US-9722063","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9722063","json":"https://patentable.app/api/llm-context/US-9722063","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:33:50.758Z"}