{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9722064","patent":{"patent_number":"US-9722064","title":"Isolated gate field effect transistor and manufacture method thereof","assignee":null,"inventors":[],"filing_date":"2013-05-21T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":13,"abstract":"An isolated gate field effect transistor and the manufacture method thereof. The isolated gate field effect transistor includes a substrate; a nitride transistor structure arranged on the substrate; a dielectric layer on the nitride transistor structure, where the dielectric layer includes a first dielectric layer, a second dielectric layer and a third dielectric layer and material of the second dielectric layer includes metal; a groove formed in a gate region and at least partially through the dielectric layer; a metal gate formed in the groove; and a source electrode and a drain electrode located at two ohmic contact regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Isolated gate field effect transistor and manufacture method thereof","description":"An isolated gate field effect transistor and the manufacture method thereof. The isolated gate field effect transistor includes a substrate; a nitride transistor structure arranged on the substrate; a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9722064","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9722064","citation_suggestion":"Patentable. \"Isolated gate field effect transistor and manufacture method thereof\" (US-9722064). https://patentable.app/patents/US-9722064","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9722064","json":"https://patentable.app/api/llm-context/US-9722064","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:18:29.121Z"}