{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9722083","patent":{"patent_number":"US-9722083","title":"Source/drain junction formation","assignee":null,"inventors":[],"filing_date":"2013-10-17T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"An embodiment method of forming a source/drain region for a transistor includes forming a recess in a substrate, epitaxially growing a semiconductor material in the recess, amorphizing the semiconductor material, and doping the semiconductor material to form a source/drain region. In an embodiment, the doping utilizes either phosphorus or boron as the dopant. Also, the amorphizing and the doping may be performed simultaneously. The amorphizing may be performed at least in part by doping with helium."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Source/drain junction formation","description":"An embodiment method of forming a source/drain region for a transistor includes forming a recess in a substrate, epitaxially growing a semiconductor material in the recess, amorphizing the semiconduct","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9722083","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9722083","citation_suggestion":"Patentable. \"Source/drain junction formation\" (US-9722083). https://patentable.app/patents/US-9722083","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9722083","json":"https://patentable.app/api/llm-context/US-9722083","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:40:41.117Z"}