{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9722091","patent":{"patent_number":"US-9722091","title":"Method for manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-09-10T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":22,"abstract":"Provided is a transistor containing a semiconductor with low density of defect states, a transistor having a small subthreshold swing value, a transistor having a small short-channel effect, a transistor having normally-off electrical characteristics, a transistor having a low leakage current in an off state, a transistor having excellent electrical characteristics, a transistor having high reliability, or a transistor having excellent frequency characteristics. An insulator is formed, a layer is formed over the insulator, oxygen is added to the insulator through the layer, the layer is removed, an oxide semiconductor is formed over the insulator to which the oxygen is added, and a semiconductor element is formed using the oxide semiconductor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing semiconductor device","description":"Provided is a transistor containing a semiconductor with low density of defect states, a transistor having a small subthreshold swing value, a transistor having a small short-channel effect, a transis","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9722091","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9722091","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor device\" (US-9722091). https://patentable.app/patents/US-9722091","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9722091","json":"https://patentable.app/api/llm-context/US-9722091","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:48:16.122Z"}