{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9722096","patent":{"patent_number":"US-9722096","title":"Method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-09-30T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":12,"abstract":"A semiconductor device including a nonvolatile memory cell and a field effect transistor together is improved in performance. In a method of manufacturing a semiconductor device, a hydrogen-containing insulating film is formed before heat treatment of a semiconductor wafer, the hydrogen-containing insulating film covering a gate electrode and agate insulating film in a region that will have a memory cell therein, and exposing a region that will have therein a MISFET configuring a peripheral circuit. Consequently, hydrogen in the hydrogen-containing insulating film is diffused into an interface between the gate insulating film and the semiconductor substrate, and thereby a defect at the interface is selectively repaired."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device","description":"A semiconductor device including a nonvolatile memory cell and a field effect transistor together is improved in performance. In a method of manufacturing a semiconductor device, a hydrogen-containing","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9722096","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9722096","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device\" (US-9722096). https://patentable.app/patents/US-9722096","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9722096","json":"https://patentable.app/api/llm-context/US-9722096","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:04:59.790Z"}