{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9722177","patent":{"patent_number":"US-9722177","title":"Resistive random access memory device with a solid electrolyte including a region made of a first metal oxide and doped by a second element distinct from the first metal","assignee":null,"inventors":[],"filing_date":"2015-06-11T00:00:00.000Z","publication_date":"2017-08-01T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":10,"abstract":"A resistive random access memory device includes a first electrode made of inert material; a second electrode made of soluble material; a solid electrolyte including a region made of an oxide of a first metal element, referred to as first metal oxide doped by a second element, distinct from the first metal and able to form a second oxide, the second element being selected such that the band gap energy of the second oxide is strictly greater than the band gap energy of the first metal oxide, the atomic percentage of the second element within the region of the solid electrolyte being comprised between 5% and 20%."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Resistive random access memory device with a solid electrolyte including a region made of a first metal oxide and doped by a second element distinct from the first metal","description":"A resistive random access memory device includes a first electrode made of inert material; a second electrode made of soluble material; a solid electrolyte including a region made of an oxide of a fir","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9722177","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9722177","citation_suggestion":"Patentable. \"Resistive random access memory device with a solid electrolyte including a region made of a first metal oxide and doped by a second element distinct from the first metal\" (US-9722177). https://patentable.app/patents/US-9722177","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9722177","json":"https://patentable.app/api/llm-context/US-9722177","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:24:13.589Z"}