{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9725823","patent":{"patent_number":"US-9725823","title":"Silicon carbide crystal and method of manufacturing silicon carbide crystal","assignee":null,"inventors":[],"filing_date":"2016-06-17T00:00:00.000Z","publication_date":"2017-08-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":4,"abstract":"An SiC crystal (10) has Fe concentration not higher than 0.1 ppm and Al concentration not higher than 100 ppm. A method of manufacturing an SiC crystal includes the following steps. SiC powders for polishing are prepared as a first source material (17). A first SiC crystal (11) is grown by sublimating the first source material (17) through heating and precipitating an SiC crystal. A second source material (12) is formed by crushing the first SiC crystal (11). A second SiC crystal (14) is grown by sublimating the second source material (12) through heating and precipitating an SiC crystal. Thus, an SiC crystal and a method of manufacturing an SiC crystal capable of achieving suppressed lowering in quality can be obtained."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide crystal and method of manufacturing silicon carbide crystal","description":"An SiC crystal (10) has Fe concentration not higher than 0.1 ppm and Al concentration not higher than 100 ppm. A method of manufacturing an SiC crystal includes the following steps. SiC powders for po","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9725823","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9725823","citation_suggestion":"Patentable. \"Silicon carbide crystal and method of manufacturing silicon carbide crystal\" (US-9725823). https://patentable.app/patents/US-9725823","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9725823","json":"https://patentable.app/api/llm-context/US-9725823","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:59:38.725Z"}