{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9728259","patent":{"patent_number":"US-9728259","title":"Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells employing differential magnetic tunnel junction (MTJ) sensing for increased sense margin","assignee":null,"inventors":[],"filing_date":"2016-03-15T00:00:00.000Z","publication_date":"2017-08-08T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":30,"abstract":"Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells employing differential magnetic tunnel junction (MTJ) sensing for increased sense margin are disclosed. By the NV-CAM cells employing MTJ differential sensing, differential cell voltages can be generated for match and mismatch conditions in response to search operations. The differential cell voltages are amplified to provide a larger match line voltage differential for match and mismatch conditions, thus providing a larger sense margin between match and mismatch conditions. For example, a cross-coupled transistor sense amplifier employing positive feedback may be employed to amplify the differential cell voltages to provide a larger match line voltage differential for match and mismatch conditions. Providing NV-CAM cells that have a larger sense margin can mitigate sensing issues for increased search operation reliability. One non-limiting example of an NV-CAM cell that employs MTJ differential sensing is a ten (10) transistor (10T)-four (4) MTJ (10T-4MTJ) NV-TCAM cell."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells employing differential magnetic tunnel junction (MTJ) sensing for increased sense margin","description":"Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells employing differential magnetic tunnel junction (MTJ) sensing for increased sense margin are disclosed. By the NV-CAM cells employing ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9728259","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9728259","citation_suggestion":"Patentable. \"Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells employing differential magnetic tunnel junction (MTJ) sensing for increased sense margin\" (US-9728259). https://patentable.app/patents/US-9728259","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9728259","json":"https://patentable.app/api/llm-context/US-9728259","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:41:30.093Z"}