{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9728292","patent":{"patent_number":"US-9728292","title":"I-layer vanadium-doped PIN type nuclear battery and the preparation process thereof","assignee":null,"inventors":[],"filing_date":"2012-05-31T00:00:00.000Z","publication_date":"2017-08-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(1), a p-type ohm contact electrode(4), a SiO2 passivation layer(2), a SiO2 compact insulation layer(3), a p-type SiC epitaxial layer(5), an n-type SiC epitaxial layer(6), an n-type SiC substrate(7) and an n-type ohm contact electrode(8). The doping density of the p-type SiC epitaxial layer(5) is 1×1019 to 5×1019 cm−3, the doping density of the n-type SiC substrate(7) is 1×1018 to 7×1018 cm−3. The n-type SiC epitaxial layer(6) is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1×1013 to 5×1014 cm−3. Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"I-layer vanadium-doped PIN type nuclear battery and the preparation process thereof","description":"A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(1), a p-type ohm contact electrode(4), a SiO2 passivation layer(2), a SiO2 compact insulatio","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9728292","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9728292","citation_suggestion":"Patentable. \"I-layer vanadium-doped PIN type nuclear battery and the preparation process thereof\" (US-9728292). https://patentable.app/patents/US-9728292","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9728292","json":"https://patentable.app/api/llm-context/US-9728292","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:41:36.942Z"}