{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9728461","patent":{"patent_number":"US-9728461","title":"Method of forming semiconductor device with different threshold voltages","assignee":null,"inventors":[],"filing_date":"2015-08-28T00:00:00.000Z","publication_date":"2017-08-08T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A method for fabricating a semiconductor device includes forming a first gate stack over a first fin feature and second gate stack over a second fin feature, removing the first gate stack to form a first gate trench that exposes the first fin structure, removing the second gate stack to form a second gate trench that exposes the second fin feature, performing a high-pressure-anneal process to a portion of the first fin feature and forming a first high-k/metal gate (HK/MG) within the first gate trench over the portion of the first fin feature and a second HK/MG within the second gate trench over the second fin feature. Therefore the first HK/MG is formed with a first threshold voltage and the second HK/MG is formed with a second threshold voltage, which is different than the first threshold voltage."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming semiconductor device with different threshold voltages","description":"A method for fabricating a semiconductor device includes forming a first gate stack over a first fin feature and second gate stack over a second fin feature, removing the first gate stack to form a fi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9728461","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9728461","citation_suggestion":"Patentable. \"Method of forming semiconductor device with different threshold voltages\" (US-9728461). https://patentable.app/patents/US-9728461","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9728461","json":"https://patentable.app/api/llm-context/US-9728461","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:15:15.228Z"}