{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9728466","patent":{"patent_number":"US-9728466","title":"Vertical field effect transistors with metallic source/drain regions","assignee":null,"inventors":[],"filing_date":"2016-04-28T00:00:00.000Z","publication_date":"2017-08-08T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":14,"abstract":"Semiconductor devices having vertical FET (field effect transistor) devices with metallic source/drain regions are provided, as well as methods for fabricating such vertical FET devices. For example, a semiconductor device includes a first source/drain region formed on a semiconductor substrate, a vertical semiconductor fin formed on the first source/drain region, a second source/drain region formed on an upper surface of the vertical semiconductor fin, a gate structure formed on a sidewall surface of the vertical semiconductor fin, and an insulating material that encapsulates the vertical semiconductor fin and the gate structure. The first source/drain region comprises a metallic layer and at least a first epitaxial semiconductor layer. For example, the metallic layer of the first source/drain region comprises a metal-semiconductor alloy such as silicide."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical field effect transistors with metallic source/drain regions","description":"Semiconductor devices having vertical FET (field effect transistor) devices with metallic source/drain regions are provided, as well as methods for fabricating such vertical FET devices. For example, ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9728466","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9728466","citation_suggestion":"Patentable. \"Vertical field effect transistors with metallic source/drain regions\" (US-9728466). https://patentable.app/patents/US-9728466","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9728466","json":"https://patentable.app/api/llm-context/US-9728466","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:10:36.483Z"}