{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9728469","patent":{"patent_number":"US-9728469","title":"Methods for forming a stress-relieved film stack by applying cutting patterns","assignee":null,"inventors":[],"filing_date":"2013-03-13T00:00:00.000Z","publication_date":"2017-08-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Disclosed herein is a method of forming a stress relieved film stack, the method comprising forming a film stack on a first side of a substrate, the film stack comprising a plurality of film layers and creating a plurality of film stack openings according to a cutting pattern and along at least a portion of a buffer region. The plurality of film stack openings extend from a top surface of the film stack to the substrate. A deflection of the substrate may be determined, and the cutting pattern selected prior to creating the film stack openings based on the deflection of the substrate. The substrate may have a deflection of less than about 2 μm after creating the plurality of film stack openings. And at least one of the plurality of film layers may comprise one of titanium nitride, silicon carbide and silicon dioxide."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods for forming a stress-relieved film stack by applying cutting patterns","description":"Disclosed herein is a method of forming a stress relieved film stack, the method comprising forming a film stack on a first side of a substrate, the film stack comprising a plurality of film layers an","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9728469","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9728469","citation_suggestion":"Patentable. \"Methods for forming a stress-relieved film stack by applying cutting patterns\" (US-9728469). https://patentable.app/patents/US-9728469","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9728469","json":"https://patentable.app/api/llm-context/US-9728469","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T20:26:21.620Z"}