{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9728472","patent":{"patent_number":"US-9728472","title":"Method for wafer etching in deep silicon trench etching process","assignee":null,"inventors":[],"filing_date":"2013-12-31T00:00:00.000Z","publication_date":"2017-08-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":11,"abstract":"A method for wafer etching in a deep silicon trench etching process includes the following steps: a. electrostatically absorbing a wafer using an electrostatic chuck, and stabilizing the atmosphere required by the process (S110); b. performing the sub-steps of a main process for the wafer, and the time for the sub-steps of the main process being shorter than the time required by the wafer main process; c. releasing the electrostatic adsorption of the electrostatic chuck on the wafer; d. determining whether the cumulative time of the sub-steps of the main process reaches a predetermined threshold or not, if so, performing the step e (S150), and if not, repeating the operations in the steps a to c (S140); and e. ending a wafer manufacturing process. The etching method avoids the wafer from continuous contact with the electrostatic chuck, reduces electrostatic accumulation on the surface of the wafer, and therefore solves the problem of resist reticulation on the surface of the wafer in the DSIE process."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for wafer etching in deep silicon trench etching process","description":"A method for wafer etching in a deep silicon trench etching process includes the following steps: a. electrostatically absorbing a wafer using an electrostatic chuck, and stabilizing the atmosphere re","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9728472","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9728472","citation_suggestion":"Patentable. \"Method for wafer etching in deep silicon trench etching process\" (US-9728472). https://patentable.app/patents/US-9728472","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9728472","json":"https://patentable.app/api/llm-context/US-9728472","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:59:10.863Z"}