{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9728502","patent":{"patent_number":"US-9728502","title":"Metal oxysilicate diffusion barriers for damascene metallization with low RC delays and methods for forming the same","assignee":null,"inventors":[],"filing_date":"2015-10-22T00:00:00.000Z","publication_date":"2017-08-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"A method is disclosed to form a metal-oxysilicate diffusion barrier for a damascene metallization. A trench is formed in an Inter Layer Dielectric (ILD) material. An oxysilicate formation-enhancement layer comprising silicon, carbon, oxygen, a constituent component of the ILD, or a combination thereof, is formed in the trench. A barrier seed layer is formed on the oxysilicate formation-enhancement layer comprising an elemental metal selected from a first group of elemental metals in combination with an elemental metal selected from a second group of elemental metals. An elemental metal in the second group is immiscible in copper or an alloy thereof, has a diffusion constant greater than a self-diffusion of copper or an alloy thereof; does not reducing silicon-oxygen bonds during oxysilicate formation; and promotes adhesion of copper or an alloy of copper to the metal-oxysilicate barrier diffusion layer. The structure is then annealed to form a metal-oxysilicate diffusion barrier."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Metal oxysilicate diffusion barriers for damascene metallization with low RC delays and methods for forming the same","description":"A method is disclosed to form a metal-oxysilicate diffusion barrier for a damascene metallization. A trench is formed in an Inter Layer Dielectric (ILD) material. An oxysilicate formation-enhancement ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9728502","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9728502","citation_suggestion":"Patentable. \"Metal oxysilicate diffusion barriers for damascene metallization with low RC delays and methods for forming the same\" (US-9728502). https://patentable.app/patents/US-9728502","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9728502","json":"https://patentable.app/api/llm-context/US-9728502","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:08:39.566Z"}