{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9728536","patent":{"patent_number":"US-9728536","title":"Semiconductor devices","assignee":null,"inventors":[],"filing_date":"2016-06-29T00:00:00.000Z","publication_date":"2017-08-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"A method for fabricating a semiconductor device includes providing a semiconductor substrate having a first region and a second region; and forming at least one first dummy gate in the first region and at least one second dummy gate in the second region. Further, the method includes forming a dielectric layer with a top surface leveling with a surface of the first dummy gate on the semiconductor substrate; oxidizing a top portion of the second dummy gate to form a protective layer to prevent over-polishing on the second region; removing the first dummy gate to form a first gate trench; forming a first metal layer to fill the first gate trench and cover the protective layer and the dielectric layer; and removing a portion of the first metal layer higher than the dielectric layer to form a first metal gate in the first gate trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices","description":"A method for fabricating a semiconductor device includes providing a semiconductor substrate having a first region and a second region; and forming at least one first dummy gate in the first region an","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9728536","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9728536","citation_suggestion":"Patentable. \"Semiconductor devices\" (US-9728536). https://patentable.app/patents/US-9728536","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9728536","json":"https://patentable.app/api/llm-context/US-9728536","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:57:55.958Z"}