{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9728600","patent":{"patent_number":"US-9728600","title":"Partially biased isolation in semiconductor devices","assignee":null,"inventors":[],"filing_date":"2015-09-11T00:00:00.000Z","publication_date":"2017-08-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A device includes a semiconductor substrate, a doped isolation barrier disposed in the semiconductor substrate and defining a core device area within the doped isolation barrier, an isolation contact region disposed in the semiconductor substrate outside of the core device area, and a body region disposed in the semiconductor substrate within the core device area, and in which a channel is formed during operation. The body region is electrically tied to the isolation contact region. The body region and the doped isolation barrier have a common conductivity type. The body region is electrically isolated from the doped isolation barrier within the core device area. The doped isolation barrier and the isolation contact region are not electrically tied to one another such that the doped isolation barrier is biased at a different voltage level than the isolation contact region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Partially biased isolation in semiconductor devices","description":"A device includes a semiconductor substrate, a doped isolation barrier disposed in the semiconductor substrate and defining a core device area within the doped isolation barrier, an isolation contact ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9728600","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9728600","citation_suggestion":"Patentable. \"Partially biased isolation in semiconductor devices\" (US-9728600). https://patentable.app/patents/US-9728600","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9728600","json":"https://patentable.app/api/llm-context/US-9728600","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:36:45.754Z"}