{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9728609","patent":{"patent_number":"US-9728609","title":"Layered substrate with a miscut angle comprising a silicon single crystal substrate and a group-III nitride single crystal layer","assignee":null,"inventors":[],"filing_date":"2012-11-01T00:00:00.000Z","publication_date":"2017-08-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"A step-flow growth of a group-III nitride single crystal on a silicon single crystal substrate is promoted. A layer of oxide oriented to a <111> axis of silicon single crystal is formed on a surface of a silicon single crystal substrate, and group-III nitride single crystal is crystallized on a surface of the layer of oxide. Thereupon, a <0001> axis of the group-III nitride single crystal undergoing crystal growth is oriented to a c-axis of the oxide. When the silicon single crystal substrate is provided with a miscut angle, step-flow growth of the group-III nitride single crystal occurs. By deoxidizing a silicon oxide layer formed at an interface of the silicon single crystal and the oxide, orientation of the oxide is improved."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Layered substrate with a miscut angle comprising a silicon single crystal substrate and a group-III nitride single crystal layer","description":"A step-flow growth of a group-III nitride single crystal on a silicon single crystal substrate is promoted. A layer of oxide oriented to a <111> axis of silicon single crystal is formed on a surface o","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9728609","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9728609","citation_suggestion":"Patentable. \"Layered substrate with a miscut angle comprising a silicon single crystal substrate and a group-III nitride single crystal layer\" (US-9728609). https://patentable.app/patents/US-9728609","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9728609","json":"https://patentable.app/api/llm-context/US-9728609","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:04:02.119Z"}